Short Pulse Effects in Semiconductor Diodes

Abstract

An investigation has been made to determine the feasibility of using PIN DIODES AS SWITCHING ELEMENTS TO CONTROL 150 PS, 8 MW impulse signals. Single diodes in shunt and in series with a 50-ohm stripline were studied, as were series stacks of up to 8 diodes. It is found in the series configurations that good signal fidelity obtains in forward bias at all signal voltages, with insertion loss being a function of I region thickness. At higher signal voltages it is an even stronger function of the signal since diode conductance significantly increases with internal voltage stress.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1972
Accession Number
AD0749125

Entities

People

  • Derek J. Fitzgerald
  • James J. Stekert

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Circuits
  • Duplexers
  • Electric Fields
  • Electrons
  • Equivalent Circuits
  • Failure Mode And Effect Analysis
  • Insertion Loss
  • Losses
  • New York
  • Pin Diodes
  • Reliability
  • Semiconductor Devices
  • Semiconductor Diodes
  • Semiconductors
  • Thickness

Fields of Study

  • Physics

Readers

  • Approximation Theory.
  • Microwave Engineering.
  • Optical Physics and Photonics.

Technology Areas

  • Microelectronics