High Capacitance Thin-Film Structures
Abstract
Silicon integrated square-wave oscillator circuits with an output frequency of 2 to 3.5 kHz were fabricated with thin-film Al-Al2O3-NiO-Al capacitors on their surface as the frequency-determining components. The capacitor values were in the range of 0.4 to 1.8 nF, corresponding to a specific capacitance between 3 and 10 microfarads/sq in. Minor modifications of the fabrication process are proposed for improving the uniformity of the capacitance values and maintaining the design goal of 10 microfarads/sq in.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1972
- Accession Number
- AD0749266
Entities
People
- Alfred E. Feuersanger
- Moe S. Wasserman