Cadmium Telluride Modulator Material
Abstract
The program involved the investigation of CdTe single-crystal growth by means of variation of crystal growth parameters, including growth rate, thermal gradient at the melting point, quench rate, and materials preparation and handling with the primary objective of optimizing heat transfer to obtain optimum monocrystalline properties for application as an infrared modulator device. Post-growth annealing techniques were also investigated. Measurements on the CdTe crystals were performed primarily as part of an internally supported Hughes Aircraft Company program; the materials study is sponsored by the Office of Naval Research. The research consisted of selection and purification of starting materials, optimization of crystal growth parameters, investigation of post-growth heat treatment, and study of the effects of oxygen contamination on materials properties for optimizing CdTe single crystal material for use in infrared electro-optic devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1972
- Accession Number
- AD0749368
Entities
People
- A. L. Gentile
- J. E. Kiefer
- N. R. Kyle
Organizations
- HRL Laboratories