Electron Beam Semiconductor Amplifier (L-Band).
Abstract
The goal of the program is to design, develop, fabricate and test exploratory development models of an L-band, RF pulse amplifier capable of 2 kilowatts peak RF output power at 1300 MHz plus or minus 10%, with a 25 dB power gain at 50% efficiency. The principal effort during this reporting period has been concentrated on the fabrication and testing of the first developmental RF amplifier. Tuning tests on this amplier have shown that there is an unexpected loss in the target structure. This results in inefficient operation at frequencies above 100 MHz and has, so far, prevented the achievement of the design level of power output at the specified operating frequency. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1972
- Accession Number
- AD0749791
Entities
People
- James A. Long
Organizations
- Watkins-Johnson Company