The Effect of Flaws on the Properties of Silicon Nitride Films,

Abstract

Silicon nitride is used as the protective coating for silicon semiconductor instruments. Films of Si3N4 have a number of favorable qualities (chemical, electrical, mechanical and masking). However, these qualities are to a great extent dependant on the method and conditions in which they are obtained. The most significant shortcoming is the charge instability apparent at room temperatures. Charge instability can generally be explained by the presence of electrically charged centers. These centers may be extrinsic ionized atoms, which drift in an applied electrical field, or various structural flaws. For an explanation of the causes of flaws in amorphic films of silicon nitride, the authors studied a model of the three dimensional compound Si3N4 with flawed covalent bonds.

Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1972
Accession Number
AD0750034

Entities

People

  • V. F. Synorov

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Coatings
  • Compound Semiconductors
  • Covalent Bonds
  • Electronics
  • Instability
  • Protective Coatings
  • Semiconductors
  • Solid State Electronics
  • Three Dimensional

Readers

  • Strategic Security Studies
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene