Study of the Nature of a p-n Heterogeneous Junction in a CdSe Monocrystal Obtained by the Gas Transport Method,
Abstract
CdSe is one of the effective materials for the creation of photoelectric converters. The paper is concerned with a study of the nature of the p-n-junction in a CdSe monocrystal. The monocrystals used in this project were grown by the gas transport method. They were black in color, lobe-shaped with an area of 1 to 4 times to the (-2) power/sq cm and a thickness of 0.01-0.03 cm, possessed electron conductivity, a specific resistance at room temperature of 130-150 ohms/cm, an electron concentration of n(e) about 10 to the 16th power cc, and a mobility of eta(e) about 300 sq cm/v-s.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 02, 1972
- Accession Number
- AD0750506
Entities
People
- G. A. Mamedova
- M. Ya. Bakirov
Organizations
- National Air and Space Intelligence Center