Optoelectronic Electron Emitter.
Abstract
The electron energy distribution of a semiconductor cold-cathode based on negative electron affinity was measured. The half-width of the energy distribution of electrons, emitted from a GaAs-(AlGa)As structure, was found to be 160 meV which is distinctly narrower than that for a conventional thermionic cathode. The measured half-width is in fair agreement with calculations that take into account energy losses suffered by the electrons in the space-charge region below the surface.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1972
- Accession Number
- AD0750611
Entities
People
- Harry F. Lockwood
- Henry Kressel
- Horst E. Schade
Organizations
- Sarnoff Corporation