Crystal Growth from the Vapor Phase and Epitaxy: An International Conference Held in Jerusalem, 21-25 May 1972.

Abstract

The main topic of the Conference was the relationship of scientific progress to industrial application in the semiconductor and microelectronics fields. Subjects discussed included material transport, nucleation, and crystal growth, especially in their relation to the production of epitaxial films for use in electronic devices. One of the newer techniques presented was liquid phase epitaxy in which the epitaxial layer is precipitated from a supersaturated or supercooled solution on a crystalline substrate. Properties of various epitaxial films and methods for their evaluation were another subject for discussion. (Author)

Document Details

Document Type
Technical Report
Publication Date
Sep 07, 1972
Accession Number
AD0750654

Entities

People

  • Immanuel Estermann

Organizations

  • Office of Naval Research

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Crystal Growth
  • Crystals
  • Epitaxial Growth
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Liquids
  • Materials
  • Phase
  • Semiconductors
  • Vapor Phases

Fields of Study

  • Materials science

Readers

  • Academic Conference Management
  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene