Investigating the Possibilities of Increasing the Stability of the Photoelectric Characteristics of Irradiated Silicon n-p Junctions,
Abstract
A change in the photoelectric characteristics of n-p junctions caused by hard irradiation is ordinarily undesirable and can be reduced by various methods. This work presents certain results of experiments on annealing irradiated silicon n-p junctions made of p-type material and on the effect of the proton bombardment of n-p junctions based on n-type silicon with a lithium admixture. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 11, 1972
- Accession Number
- AD0750977
Entities
People
- A. P. Landsman
- G. M. Grigorev
- L. B. Krenin
Organizations
- National Air and Space Intelligence Center