Study the Defect Structure of the Semiconducting III - V Compounds and Other Related Materials.
Abstract
The report summarizes the research efforts on a series of projects. In all cases the research concerns the vibrational properties of imperfect systems, and the systems include Li-diffused GaAs, Si-doped GaAs, Ge(x)Si(1-x), Ion implanted Al and P in GaAs, and Mg-doped GaAs. The results include the identification of two different Li complexes in GaAs, the determination of the Si complexes in GaAs, the lattice and local mode absorption in GeSi alloys and the ion-pairing between Mg and Li in GaAs. The information obtained is compared with results of other measurements and in some cases comprehensive models of the dominant defects are developed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 27, 1972
- Accession Number
- AD0751052
Entities
People
- William G. Spitzer
Organizations
- University of Southern California