Accretion of Zinc Telluride on Zinc Selenide Using the Reaction Diffusion Method,

Abstract

The article discusses a method for growing the semiconductive two-layer structures of ZnSe-ZnTe with varying degree of conductivity by changing the atmospheres (selenide, tellurium). These studies are of practical interest as ZnSe has n-conductivity and ZnTe has p-conductivity. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 17, 1972
Accession Number
AD0751476

Entities

People

  • N. N. Koren
  • N. N. Sirota

Organizations

  • National Air and Space Intelligence Center

Tags

DTIC Thesaurus Topics

  • Atmospheres
  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Conductivity
  • Diffusion
  • Electronics
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Semiconductors
  • Silicon Carbide
  • Silicon Compounds
  • Solid State Electronics
  • Tellurides
  • Tellurium

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Surface Engineering/Surface Coating Technology.