Electrical Transport Properties of Vanadium Dioxide Near its Semiconductor-to-Metal Transition.
Abstract
The report discusses the phase diagram of the vanadium-oxygen system, important physical properties of VO2 with a theoretical explanation of the properties of VO2. Also discussed are possible methods of crystal growth, apparatus for Hall effect measurements, and results of the Hall effect measurements. X-ray and hydrostatic pressure measurements are included. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1972
- Accession Number
- AD0751524
Entities
People
- William Henry Rosevear
Organizations
- Harvard University