The Trap Structure of Pyrolytic Al2O3 in MOS Capacitors

Abstract

The trap structure of the pyrolytic Al2O3 layer of MOS capacitors was investigated by a technique in which the capacitor was used as an integral detector of the charge trapped in the oxide. In all the samples studied, five trap levels were found to exist extending from 2.2 eV to 4.5 eV below the oxide conduction band. The spatial distribution of these traps was inferred from complementary photoconductivity measurements. This method is applicable to the study of the effects of radiation damage and ion implantation on the trap structure of this and other thin film insulators.

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Document Details

Document Type
Technical Report
Publication Date
Nov 15, 1972
Accession Number
AD0751629

Entities

People

  • B. S. Royce
  • E. Harari

Organizations

  • Princeton University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum
  • Band Gaps
  • Capacitors
  • Charge Density
  • Classification
  • Conduction Bands
  • Dielectrics
  • Electrons
  • Energy Bands
  • Energy Levels
  • Films
  • Materials
  • Materials Laboratories
  • Metals
  • Radiation
  • Spatial Distribution
  • Thickness

Readers

  • Semiconductor Device Technology

Technology Areas

  • AI & ML
  • Microelectronics
  • Microelectronics - Graphene