The Determination of Optical Properties and Energy Gap of Pb(1-X)Sn(X)Te Thin Films in the Fundamental Absorption Edge Region

Abstract

The optical properties of single-crystal Pb(1-x)Te thin films in the fundamental absorption edge region were investigated. Tin compositions of 0 <or= x <or= 0.24, where x is the mole fraction of SnTe, were studied from room to liquid nitrogen temperatures. Two thin film samples with x = 0.70 and x - 0.85 were also studied in an attempt to confirm the inversion of the conduction and valence bands which had been previously predicted for this narrow-gap semiconductor. The index of refraction n and the absorption coefficient alpha were determined from transmission and reflection measurements made on films 0.8 to 5.0 microns thick, which were deposited on cleaved (100) faces of KCL rocksalt substrates. The optical energy gap was determined from the position of the absorption edge in the absorption spectrum. The index of refraction was obtained using the interference fringe method.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1972
Accession Number
AD0751650

Entities

People

  • Victor M. Walz Jr.

Organizations

  • Naval Postgraduate School

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Diffraction
  • Electromagnetic Fields
  • Energy Bands
  • Energy Gaps
  • Equations
  • Films
  • Materials
  • Measurement
  • Narrow Band Gap Semiconductors
  • Optical Properties
  • Refraction
  • Refractive Index
  • Semiconductors
  • Solid State Physics
  • Thin Films
  • Valence Bands

Fields of Study

  • Materials science
  • Physics

Readers

  • Materials Science and Engineering.
  • Optical Physics and Photonics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene