Nonlinear Properties of IMPATT Devices.
Abstract
CS OF IMPATT diodes by developing a model which occupies the middle ground between the simplified Read structure models and the very general large-scale computer simulation models. To accomplish this objective one major simplifying assumption is made: that the generation of carriers by impact ionization is localized to a region near the metallurgical junction which is relatively small compared to the total depletion width. However, the avalanche region is defined in such a manner that various realistic doping profiles and materials can be treated. Other than this assumption the carrier transport properties are kept as general as possible. The model is appropriate to the diode structures which are of the most practical importance, i.e., abrupt and hyperabrupt junctions. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1972
- Accession Number
- AD0751974
Entities
People
- W. E. Schroeder
Organizations
- University of Michigan