Effects of Annealing in the Electro-Optical Properties of Amorphous Ge(.5)Te(.5) Films,

Abstract

The temperature and intensity dependences of photoconductivity, Delta sigma, at lambda = 1.10 micrometers and the room temperature spectral response in as-deposited (substrate temperature 100K) and annealed films (annealing temperature 100C) of amorphous Ge.5Te.5 were studied and interpreted in terms of recombination models proposed by Arnoldussen et al. (Author)

Document Details

Document Type
Technical Report
Publication Date
Aug 15, 1972
Accession Number
AD0752024

Entities

People

  • H. R. Riedl
  • K. P. Scharnhorst

Organizations

  • Naval Ordnance Laboratory

Tags

DTIC Thesaurus Topics

  • Annealing
  • Electrical Properties
  • Electricity
  • Heat Treatment
  • Intensity
  • Micrometers
  • Optical Properties
  • Photoconductivity
  • Substrates

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology