Sputtered Thin Film Research

Abstract

The deposition of aluminum nitride was studied by comparing results obtained by reactive rf sputtering in nitrogen and ammonia ambients. Physical and optical properties of the films were measured. Charge storage characteristics of MIS capacitors employing a composite insulator structure of SrTiO3-SiO2 were studied. The strontium titanate was deposited by rf sputtering. Field effect transistors using SrTiO3-SiO2 gate insulation were fabricated and evaluated.

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Document Details

Document Type
Technical Report
Publication Date
Nov 27, 1972
Accession Number
AD0752081

Entities

People

  • Alexander J. Shuskus
  • Daniel J. Quinn
  • Edward L. Paradis

Organizations

  • United Technologies Corporation

Tags

DTIC Thesaurus Topics

  • Aluminum Oxides
  • Ceramic Materials
  • Crystals
  • Dielectrics
  • Diffraction
  • Energy Bands
  • Epitaxial Growth
  • Fabrication
  • Field Effect Transistors
  • Materials
  • Materials Processing
  • Measurement
  • Optical Properties
  • Piezoelectric Crystals
  • Refractive Index
  • Semiconductors
  • Thin Films

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene