On the Synthesis of SiC Single Crystals
Abstract
A method is proposed to synthesize SiC single crystals free of carbon particle inclusions. An empty graphite crucible is connected with the crucible containing silicon melt by means of a graphite pipe. The former crucible is heated to approximately 2,500C, as in the ordinary sublimation process, while the temperature of the latter is lowered. Crystal growth is accomplished in the empty crucible. The experiments conducted are preliminary. Problems such as damages to the crucible containing silicon melt, prevention of silicon leak, and control of the amount of silicon supply to the growth cavity are examined. The structure of the furnace necessary for the implementation of the method is discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 05, 1972
- Accession Number
- AD0752227
Entities
People
- Hirokichi Tanaka
- Yoshizo Inomata
Organizations
- Emmanuel College