Contacts between Chalcogenide Glasses, Metals and Semiconductors
Abstract
The purposes of the research are to elucidate the mechanism of threshold switching, and to explore systems with contact materials which can be electronically altered in situ. With this end in view, the experimental work performed during the last six months has concerned itself with the following problems: Calculation of the voltage-current characteristics in the ON-state, based on a free-carrier space charge model; Establishment of a criterion for the instability (threshold) point, based on the equivalence of dielectric relaxation time and carrier lifetime; and, Attempts at correlating carrier lifetime with the short-term memory and minimum holding current of threshold switches.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1972
- Accession Number
- AD0752560
Entities
People
- H. K. Henisch
- Sang‐Hyun Lee
Organizations
- Pennsylvania State University