A Radiation Effects Research Program.

Abstract

;Contents: Invariant imbedding applied to the solution of transport problems with internal sources - The ill-behaved reflection function case; Energy levels and density of states in three-dimensional crystals; Band structure of silicon by the APW method; Wave functions in semiconductors; Thermal oxidation of gallium arsenide phosphide; Radiation effects on GaAsP MIS capacitors; Open-tube Zn-diffused GaAs(1-x)P(x) light-emitting diodes; A study of GaAs(1/2)P(1/2) MIS capacitors fabricated by using electron-beam-evaporated aluminum oxide; Electron and neutron radiation effects on electron-beam evaporated high-mobility thin films of indium antimonide; Fabrication of p-type tellurium thin-film transistors using photoengraving and anodized Al2O3 techniques; Pulsed electron beam bombardment of semiconductor materials; Metal-insulator-semiconductor structures created by ion implantation; Metal-TiO2-silicon structures; Hybrid radiation-hardened line-driver amplifier; Radiation testing accessories designed for use during electron-beam tree experiments.

Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1972
Accession Number
AD0752561

Entities

People

  • G. M. Wing
  • L. T. Boatwright
  • R. C. Allen Jr.
  • W. J. Byatt
  • Wayne W. Grannemann

Organizations

  • University of New Mexico

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum Oxides
  • Amplifiers
  • Band Structures
  • Electron Beams
  • Electrons
  • Energy Levels
  • Films
  • Gallium Arsenides
  • Indium Antimonides
  • Ion Implantation
  • Light Emitting Diodes
  • Materials
  • Radiation
  • Radiation Effects
  • Semiconductors
  • Thin Film Transistors
  • Thin Films

Fields of Study

  • Physics

Readers

  • Calculus or Mathematical Analysis
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene