Characterization of IR Windows.
Abstract
High resistivity GaAs is a candidate window material for high power CO2 lasers emitting at 10.6 micrometers. The measured absorptions at this wavelength have typically been in the range 0.01 to 0.025/cm. Other candidate materials have been prepared with absorptivities as low as 0.0006/cm. Consequently, a characterization program was undertaken to determine if the measured absorptivities are intrinsic to GaAs or alternatively are the result of a structural or chemical defect common to all melt grown, high resistivity GaAs. Evaluation samples from boules prepared under a wide range of growth conditions were supplied. Characterization procedures emphasized direct observation of structure, using techniques having successively higher limits of resolution; methods included optical and infrared microscopy, X-ray topography and transmission electron microscopy. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1972
- Accession Number
- AD0752783
Entities
People
- Edward T. Peters
- John S. Haggerty
Organizations
- Arthur D. Little