Investigation of Intrinsic Defects in Zinc Selenide Single Crystals through High-Temperature Equilibrium Conductivity Measurements,
Abstract
The concentration of intrinsic defects in undoped ZnSe-single crystals were investigated in the temperature range from 750C to 980C in connection with zinc partial pressure, which was varied between 700 Torr and 1 Torr. From the measurements, it followed that at high Zn partial pressure, a simple ionized self-donor, and at low Zn partial pressure a doubly ionized self donor, presumably Zn in interlattice space, is the dominating electrically active intrinsic defect in the high temperature equilibrium. The lattice energy for the simply ionized donor was determined to be approximately equal 1.64 eV.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 27, 1972
- Accession Number
- AD0753043
Entities
People
- Jost-ulrich Jahn
Organizations
- National Air and Space Intelligence Center