Characterization of Conduction Processes in Amorphous Semiconductors

Abstract

Several different samples of 2As2Se3,As2Te3, As2Se3, As2Se3, As2S3 and Si(3%) Ge(4%) As(38%) Te(55%) were used in photodielectric tests. However, none of the experiments, conducted at room temperature, 77K, or 4.2K, produced any photodielectric effect. Several reasons for the absence of positive results were analyzed, and it was decided that low optical absorption of the material, low mobility of free carriers, and short momentum relaxation time were the reasons which best explained the negative photodielectric tests. The thermally stimulated conductivity experiment provides a convenient way to investigate these hypotheses by investigating the trapping centers existing in the material under study. Samples of amorphous thin film As2Se3 were investigated in this manner.

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Document Details

Document Type
Technical Report
Publication Date
Aug 31, 1972
Accession Number
AD0753053

Entities

People

  • J. L. Stone

Organizations

  • Texas A&M University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amorphous Materials
  • Band Gaps
  • Cavity Resonators
  • Conduction Bands
  • Control Systems
  • Electric Fields
  • Electromagnetic Fields
  • Energy Bands
  • Energy Gaps
  • Fermi Levels
  • Klystrons
  • Low Temperature
  • Measurement
  • Microwave Equipment
  • Recording Systems
  • Resonant Frequency
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene