Simplified Modeling of Integrated Circuits for Radiation Performance Prediction
Abstract
The report describes a simple method for developing computer models for digital and analog integrated circuits. The models are capable of allowing computer prediction of both normal performance and performance when the devices are exposed to gamma and neutron radiation environments. Device models have been developed for two NAND gates, two flip-flops, one four-bit Shift Register, a Monostable Multivibrator, an AND-OR-INVERTER, and two operational amplifiers. All models are demonstrated to agree with observed laboratory performance for conditions of pulsed gamma radiation of 3 x 10 to the 10th power rads (Si)/ Second. Neutron fluence levels of 1.2 x 10 to the 14th power neutrons per square centimeter, as well as non-radiation conditions. The 'black box' technique is employed for model development. The model descriptions were developed for use with the SCEPTRE circuit analysis program.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1972
- Accession Number
- AD0753413
Entities
People
- J. R. Greenbaum
Organizations
- General Electric