Boundary Scattering of Phonons in Germanium and Silicon
Abstract
Measurements of low-temperature thermal conductivity have been made on high-purity Ge single-crystal samples with various degrees of surface polish, to complement similar measurements previously reported on silicon. As a result of the more pronounced isotopic impurity content, bulk scattering could not be completely eliminated even in our thinnest (approximately 0.5 mm) and roughest samples. Accordingly, a Calloway-type analysis was used in order to extract the boundary-limited mean free path.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 06, 1972
- Accession Number
- AD0753494
Entities
People
- D. R. Frankl
- George J. Campisi
Organizations
- Pennsylvania State University