High Resolution Detection of Trapped Electron Charges in SiO2 by Scanning Electron Microscopy.

Abstract

NICS COMMAND FORT MONMOUTH N JHigh Resolution Detection of Trapped Electron Charges in SiO2 by Scanning Electron Microscopy.Research and development technical rept.,Ahlstrom,E. R. ;Wheeler,W. S. ;Cook,C. F. ;ECOM-4036DA-1-B-662703-A-4401-B-662703-A-44003(*silicon dioxide, space charge), electrons, electron irradiation, ultraviolet radiation, electron microscopy, dielectric filmselectron microscopy, electronic scannersA novel method for detection of trapped charges in silicon dioxide (SiO2) is described. Traps that exist in the oxide are first charge by low energy electron bombardment. Then, illumination will ultraviolet (UV) light through a mask produces a latent image in the oxide. Subsequent exposure to a scanning electron microscope (SEM) reads out the image. The image sharpness is related to trap density. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1972
Accession Number
AD0753916

Entities

People

  • C. F. Cook
  • E. R. Ahlstrom
  • W. S. Wheeler

Organizations

  • United States Army Communications-Electronics Command

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Detection
  • Electron Irradiation
  • Electron Microscopes
  • Electron Microscopy
  • Electrons
  • High Resolution
  • Microscopes
  • Microscopy
  • Radiation
  • Scanning
  • Scanning Electron Microscopes
  • Scanning Electron Microscopy
  • Silicon Dioxide
  • Space Charge
  • Ultraviolet Radiation

Fields of Study

  • Physics

Readers

  • Energy Conservation and Renewable Energy Engineering.
  • Image Processing and Computer Vision.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Space