Interaction of Semiconductor Materials with Laser Radiation at 10.6 Micrometers
Abstract
The selective application of such techniques as optical microscopy, scanning electron microscopy, electron microprobe analysis, x-ray crystallography, spin resonance spectroscopy, and infrared spectroscopy provides a specialized dacility for the detailed characterization of the nature of the damage state and the paths which lead to this state. Preliminary results on the changes induced in silicon samples show five distinct phases: (1) thermal etching; (2) stress relief through formation of slip traces and cracks; (3) peak formation; (4) melting; and (5) abrupt surface modification. These detailed results are unique in the study of 10.6 micrometer laser irradiation of semiconductor materials. The nature of these mechanisms and the possible means of component immunization are discussed. Early steps in the development of a theoretical molecular model for the use of a static absorbing gas as a damage prevention mechanism are given.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1972
- Accession Number
- AD0753918
Entities
People
- C. F. Cook Jr.
- J. P. Mahoney
- J. R. Shappirio
- R. D. Bates Jr.
- R. S. Rohde
Organizations
- United States Army Communications-Electronics Command