Investigation of Impurities in Thermally Grown SiO2.
Abstract
The effects of HCl processing on the quality and electrical stability of thermally grown SiO2 layers on Si were investigated electrically by MOS capacitance measurements and analytically by Secondary-Ion Mass Spectrometry (SIMS). The results indicate that the addition of 1 to 10 mole percent of HCl to the oxidizing atmosphere during the thermal oxidation of Si affects both the amount of Na incorporated into the growing oxide and the susceptibility of the oxide to the effects of 'excess' Na introduced during postoxidation processing. The passivation of HCl-processed oxides against positive ion instability appears to occur by two mechanisms. At HCl/O2 ratios approximately = or < 5 percent, excess Na is 'trapped' or 'neutralized' by Cl incorporated into the oxide, while at HCl/O2 ratios of about 10 percent, the penetration of surface Na into the oxide is impeded by the presence of grown-in Cl. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1973
- Accession Number
- AD0754110
Entities
People
- R. D. Baxter
Organizations
- Battelle Memorial Institute