Effective-Impurity Model of Optical Absorption Edges,
Abstract
A simple model of an amorphous or disordered semiconductor is presented in which the disorder is approximated by a distribution of effective impurities. In this model the disorder potential in a given region of the semiconductor is characterized by an effective charge, and the optical absorption in that region is calculated. The total absorption is then a statistical average (over effective charge distributions) of the absorption in the presence of a single effective-impurity. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1972
- Accession Number
- AD0754879
Entities
People
- John D. Dow
- John J. Hopfield
Organizations
- Princeton University