Investigation of Radiation-Induced Defects in Silicon P-N Junctions.
Abstract
The intent investigation characterizes electron- and neutron-induced defects in silicon pn junctions. Both p(+)n and n(+)p junctions were fabricated in various (111) silicon substrates which included homogeneous, SiCl4 epitaxial, and SiH4 epitaxial material. Defects were characterized between liquid nitrogen and room temperatures, using thermally stimulated junction measurements. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1972
- Accession Number
- AD0754905
Entities
People
- Martin G. Buehler
Organizations
- Texas Instruments