Low Temperature Growth of Cubic Gallium Nitride.

Abstract

A system is described which uses the organometallic compound triethygallium monammine (Ga(C2H5)3.NH3) for the chemical vapor deposition of thin films of gallium nitride. Measurements and studies of the physical characteristics and the electrical properties of films obtained from this process are described. The emphasis of this work is towards achieving low temperature (<600C) growth of gallium nitride in the cubic crystal structure. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1973
Accession Number
AD0755237

Entities

People

  • James E. Andrews
  • John R. Hauser
  • Michael A. Littlejohn

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Crystal Structure
  • Electrical Properties
  • Films
  • Gallium
  • Gallium Nitrides
  • Low Temperature
  • Nitrides
  • Organometallic Compounds
  • Thin Films
  • Vapor Deposition

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene