Vapor Phase Epitaxy of Gallium Arsenide.

Abstract

GaAs epitaxial layers of good semiconductor quality (comparable to bulk GaAs) have been prepared by the arsine method. The preparative technique and improvements are described. Overall, the arsine system has proved not only reliable but simple as well. The growth rates are reasonably high for practical device fabrication. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 26, 1973
Accession Number
AD0755434

Entities

People

  • Arrigo Addamiano

Organizations

  • United States Naval Research Laboratory

Tags

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Elements
  • Fabrication
  • Gallium
  • Gallium Arsenides
  • Group 13 Elements
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Metals
  • Phase
  • Semiconductors
  • Solid State Electronics
  • Vapor Phases

Fields of Study

  • Materials science

Readers

  • Analytical Chemistry
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene