Reliability Testing of Electron Bombarded Semiconductor Diodes.
Abstract
Reliability tests of reverse biased semiconductor diodes under CW electron beam bombardment are described. A semiconductor target, with aluminum top metallizat ion was tested at 6 W/sq mm diode dissipation density for 1037 hours and at 10 W/sq mm for an additional 1045 hours. A second device with two diodes operating Class B has been tested for 1016 hours at 1 W/sq mm dissipation density. These latter diodes had platinel-silicide top metallization and integral beam shields. Diode reverse breakdown voltage drops of less than 5 percent, after an initial stabilization, are reported. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1973
- Accession Number
- AD0755449
Entities
People
- Aris Silzars
Organizations
- Watkins-Johnson Company