Fundamental Studies of Semiconductor Heteroepitaxy
Abstract
The objective of this program is to carry out a fundamental study of nucleation and film growth mechanisms in heteroepitaxial semiconductor thin films, and to apply the results to the preparation of improved films and thin- film devices on insulating substrates. Both theoretical and experimental investigations are involved with emphasis on chemical vapor deposition (CVD) techniques applied to the Si/Al2O3, Si/MgAl2O4, and GaAs/Al2O3 systems. The accomplishments of the fifth six-month period are described in terms of seven program subtasks.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1973
- Accession Number
- AD0755529
Entities
People
- A. J. Hughes
- Arthur C. Thorsen
- Harold M. Manasevit
- Joseph L. Kenty
- Ralph P. Ruth