Development of Multiply Sensitized Ho:YLF as a Laser Material.
Abstract
TURE, THERMAL CONDUCTIVITY, DENSITY, HARDNESS, THERMAL EXPANSION, MODULUS OF ELASTICITY, OPTICAL PROPERTIES, DAMAGE, RADIATION EFFECTS*LASER MATERIALS, *LITHIUM YTTRIUM TETRAFLUORIDE, HOLMIUM IONS, HOLMIUM GLASS LASERS, THULIUM IONS, TOP SEEDED CRYSTAL GROWTH, ERBIUM IONSThe results of a twelve month program to investigate the physical, spectroscopic and laser properties of multiply sensitized Ho:YLF are presented. High two micron laser operating efficiencies at room temperature are obtained in this material as the result of absorption of pump radiation by the heavily doped sensitizing (Er(3+)-Tm(3+)-Yb(3+) ions with subsequent, rapid transfer to the active (Ho3+) species. Laser emission in the 2.06 micrometer region occurs via stimulated emission of the 5I7 - 5I8(Ho(3+) transition. A description of the technique for growth of YLF single crystals together with modifications performed during this program is included. The results of mass spectrographic analysis and chemical analysis of selected growth runs are presented. Phenomenological models of the energy transfer process have been constructed from which predictions of transfer efficiency variations with composition can be made.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1973
- Accession Number
- AD0755530
Entities
People
- Arthur Linz
- Charles S. Naiman
- Evan P. Chicklis
- Hans P. Jenssen
- Robert C. Folweiler