Power Capability of Electron Beam-Semiconductor Amplifiers using Large Area Diodes.
Abstract
Design equations have been formulated electron beam-semiconductor amplifiers in which large area diodes are used for enhancement of output power. Both Class A and Class B modes (as well as video) are treated. Both average and peak power are considered. Corrections to the doping density caused by velocity field dependence are taken into account. Numerical examples are given. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1972
- Accession Number
- AD0755806
Entities
People
- Maurice Weiner
Organizations
- United States Army Communications-Electronics Command