A Study of Effects of High Energy Electron Radiation on Selected Electronic Devices.

Abstract

The study investigates the behavior of TTL NAND Gates (Signetics SE480Q) and MOS Field Effect Transistors (2N4067) in an electron radiation environment (produced by the Naval Postgraduate School Linear Accelerator). The electron radiation within two planetary radii of Jupiter is estimated to be of the order of 50 million electrons per square centimeter per second. The 'Grand Tour' outer planets space probe was to spend about ten hours in this environment thus receiving an exposure of about 2 X 10 to the 12th power electrons/sq. cm. Exposures of about 10 to the 15th power electrons/sq. cm. for TTL NAND Gates and 10 to the 14th power electrons/sq. cm. for the MOSFETS were required before failure or serious degradiation of performance occured. Therefore, in the electron environment near Jupiter, satisfactory operation should be expected for about 500 hours for the MOSFETS and 5000 hours for the TTL NAND Gates. (Author Modified Abstract)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1972
Accession Number
AD0756215

Entities

People

  • Thomas Francis Lane

Organizations

  • Naval Postgraduate School

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Electrons
  • Environment
  • Field Effect Transistors
  • High Energy
  • Linear Accelerators
  • Nand Gates
  • Outer Planets
  • Radiation
  • Space Probes
  • Transistors

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Mathematics or Statistics
  • Nuclear and Radiation Engineering.

Technology Areas

  • Microelectronics
  • Space
  • Space - Hall-Effect Thruster
  • Space - Satellites