Device Fabrication and Radiation Effects Studies of Various Semiconductors.
Abstract
;Contents: A study of electron beam evaporated high-mobility indium antimonide and III-V compound semiconductor thin films; Radiation effects on hall and magnetoresistance devices of InSb bulk and thin films; Silicon and GaAsP metal-insulator-semiconductor capacitors and Te thin-film transistors.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1972
- Accession Number
- AD0756249
Entities
People
- T. W. Kim
- Wayne W. Grannemann
Organizations
- University of New Mexico