Damage Profiles in Silicon and their Impact on Device Reliability

Abstract

Standard silicon wafers are shown to frequently contain residual mechanical saw damage in the surface. The damage is identified through transmission electron microscopy (TEM) as microsplits of the silicon lattice. Microsplits are not detectable by standard inspection, screening or etching techniques. Microsplit dimensions range from 0.1 to 10 micrometer. The density of the splits can vary from zero to 10 to the 6th power/sq cm or even higher. Microsplits are shown to cause loss of storage time in MOS capacitors.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1973
Accession Number
AD0756250

Entities

People

  • Guenter H. Schwuttke

Organizations

  • International Business Machines Corporation (Armonk, NY)

Tags

DTIC Thesaurus Topics

  • Capacitors
  • Commerce
  • Crystal Lattices
  • Crystals
  • Electron Microscopy
  • Failure Mode And Effect Analysis
  • Line Defects
  • Materials
  • Mechanical Properties
  • Microscopy
  • Scanning Electron Microscopy
  • Security
  • Semiconductors
  • Solid State Electronics
  • Standards
  • Stresses
  • Transmission Electron Microscopy

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Microelectronics - Microelectromechanical Systems