The Effects of Proton Bombardment on PbSnTe.
Abstract
The effects of 200-250 KeV proton bombardment on both p-type and n-type Pb(0.80)Sn(0.20)Te thin films were investigated. Emphasis was placed on p-type samples to determine the feasibility and dosage required to change the carrier type and to determine the stability after bombardment. This method of conversion has promise in the fabrication of photovoltaic diode arrays for infrared applications. The samples were characterized by Hall effect and conductivity measurements from 90K to 300K. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1972
- Accession Number
- AD0756542
Entities
People
- David Graham Anderson
Organizations
- Naval Postgraduate School