An Investigation of Thin Single-Crystal Silicon Films on Insulator/ Polycrystalline-Silicon Substrates

Abstract

The report summarizes the results of a nine-month, research-and- development study of the material properties of thin, single-crystal silicon films supported by insulator/polycrystalline-silicon substrates. Considerable effort was devoted to developing reproducible processes for the fabrication of these thin films, and methods were developed to evaluate their quality. After reasonable film quality had been obtained, the properties of the films were investigated in more detail. The majority-carrier mobility and minority-carrier lifetime were studied. Diffusion of dopant impurity atoms into the films and oxidation of the films were considered, and the stress in the thin films was investigated.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1973
Accession Number
AD0756646

Entities

People

  • Theodore I Kamins

Tags

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Ceramic Materials
  • Compound Semiconductors
  • Crystals
  • Electronics Industry
  • Fabrication
  • Integrated Circuits
  • Materials
  • Measurement
  • P-N Junctions
  • Polycrystals
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Single Crystals
  • Thin Films
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Software Engineering
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene