Radiation Damage in Semiconductors.

Abstract

The work on radiation damage in semiconductors carried out at SUNY/Albany is described. The work is primarily on EPR spectra observed in neutron irradiated silicon. The observation of seven new spectra are discussed including their behavior on annealing (with and without a uniaxially stress). The photo response of EPR spectra is considered. The identification of a major center - the P-1 center, is established as the negative charge state of a five-vacancy center. (Author)

Document Details

Document Type
Technical Report
Publication Date
Aug 31, 1972
Accession Number
AD0756907

Entities

People

  • James W. Corbett

Organizations

  • State University of New York

Tags

DTIC Thesaurus Topics

  • Annealing
  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Identification
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Observation
  • Radiation
  • Semiconductors
  • Silicon Carbide
  • Solid State Electronics
  • Spectra

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Nuclear and Radiation Engineering.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics