GaAs Junction Field-Effect Transistor Radiation Study.

Abstract

The report conducts an experimental investigation of GaAs J-FET's and their electrical parameter degradation in a fast neutron environment, an experimental investigation of GaAs J-FET's and their electrical behavior (transient response) in gamma radiation environment, and an experimental investigation of GaAs J-FET's in digital logic function circuits with respect to the threshold of changing logic state induced by ionizing (gamma) radiation.

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1972
Accession Number
AD0756914

Entities

People

  • Kurt Lehovec
  • Rainer Zuleeg

Tags

DTIC Thesaurus Topics

  • Corpuscular Radiation
  • Degradation
  • Environment
  • Fast Neutrons
  • Field Effect Transistors
  • Gamma Rays
  • Neutrons
  • Nuclear Radiation
  • Radiation
  • Transistors

Fields of Study

  • Physics

Readers

  • Nuclear and Radiation Engineering.
  • Semiconductor Device Technology