Tunnel Diode and Its Microwave Amplification and Oscillation. Part 1,
Abstract
The tunnel diode is a new type of semiconductor device. Its operating theory is based on the penetration of electrons through the narrow p-n junction barrier by quantum mechanical tunneling. At present, more than 350 kinds of tunnel diodes are listed as commodities among which, those used in the microwave area have a resistive cutoff frequency approaching 30 GHz. The characteristic parameters of tunnel diodes used in the microwave area are shown in order to indicate the present level of tunnel diode development.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 26, 1973
- Accession Number
- AD0756932
Entities
People
- Shih-chieh Wang
Organizations
- National Air and Space Intelligence Center