The Traveling Space Charge Wave GaAs Amplifier.
Abstract
Antognetti,P. ;Bisio,G. R. ;Kofol,S. ;ML-2117F30602-72-C-0269RADCTR-72-352(*microwave amplifiers, *gallium arsenides), design, space charge, x band, semiconducting films, manufacturing, gates(circuits)schottky barrier devices, traveling wavesOne batch of amplifiers with Schottky-barrier input gates was made. All the devices tended to oscillate, although the available theory predicted a stable behavior. An investigation was started to determine whether higher order modes were responsible for the unstable behavior. In the meantime, a new design was carried out with Schottky-barrier input and output gates, and a new rf test fixture was fabricated and tested. Theoretical investigations of the dc field distribution along the device and the input-output impedance along the device was carried out. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1973
- Accession Number
- AD0757219
Entities
People
- G. R. Bisio
- Gordon S. Kino
- P. Antognetti
- S. Kofol
Organizations
- Stanford University