Effects of Neutron Irradiation on the Electrical Properties of Indium Arsenide (Vliyanie Neitronnogo Oblucheniya na Alektricheskie Svoistva Arsenida Indiya),

Abstract

The article discussed the results of research into radiation defects, arising in neutron irradiation of n- and p-type indium arsenide, and their effect on the electrical properties of crystals, as well as the results of studies of the kinetics of annealing these defects. (Author Modified Abstract)

Document Details

Document Type
Technical Report
Publication Date
Jan 12, 1973
Accession Number
AD0757468

Entities

People

  • B. I. Boltake
  • E. P. Savin

Organizations

  • United States Army Foreign Science and Technology Center

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Annealing
  • Chemical Compounds
  • Compound Semiconductors
  • Electrical Properties
  • Electromagnetic Radiation
  • Electronics
  • Kinetics
  • Neutron Bombardment
  • Radiation
  • Semiconductors
  • Solid State Electronics

Readers

  • Information Retrieval
  • Materials Science and Engineering.
  • Semiconductor Device Technology