Study of Transient Radiation Effects on a Monolithic Integrated Circuit Ferrite Phase Shifter Driver.
Abstract
1-S-662703-A-44002(*phase shift circuits, failure(electronics)), (*integrated circuits, damage), ferrites, semiconductor devices, electrical properties, gamma rays, test methods, (u)test methodslarge scale integrated circuits, metal oxide semiconductors, schematic diagrams, transient radiation effects(electronics)A study was performed to determine the permanent performance degradation due to transient radiation on a ferrite phase shifter driver circuit. The driver circuit contained two types of monolithic integrated circuits--a large scale integration (LSI) P-channel metal-oxide-semiconductor (P-MOS) circuit to perform the steering logic and a bipolar circuit to perform the high current analog driver function. An analysis was made to predict possible failure modes, and irradiation tests were run on sample circuits. The subsequent test results showed satisfactory circuit performance, up to an irradiation level of approximately 10 to the 13th power n/sq cm (E > or = 10 keV) and gamma radiation of 30,000 R. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1973
- Accession Number
- AD0757618
Entities
People
- Henry A. Schauer
- Vincent J. Organic
Organizations
- United States Army Communications-Electronics Command