RF Sputter Etching of Al, SiO2, and Photoresist.
Abstract
The procedures followed to determine the feasibility of using an rf-generated argon plasma to sputter etch windows through 8000 A of SiO2 are described in this thesis. The sputtered windows will be used to fabricate Schottky diodes and interconnections for multilayer devices. The rf sputter etch rate for Al, SiO2 and Waycoat photoresist was investigated at various self-bias voltages and longitudinal magnetic fields. All experiments were carried out at 27.12 MHz and 10 mTorr argon pressure. (Author Modified Abstract)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1972
- Accession Number
- AD0757878
Entities
People
- Kenneth D. Wilkinson
Organizations
- Air Force Institute of Technology