Density of States of A(III)B(V) Semiconductor Compounds,

Abstract

The density of electronic states of semiconductor compounds with a complicated law of dispersion is theoretically studied, taking into account the interaction between charge carriers and impurities. The general formula is analyzed for two particular values of energy: near the Fermi level, and the bottom of conduction band. The results obtained are applicable to semiconductor compounds of the type A(III)B(V), for example, to indium antimonide, InSb. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 17, 1973
Accession Number
AD0758168

Entities

People

  • A. P. Dzhotyan

Organizations

  • United States Army Foreign Science and Technology Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Antimonides
  • Charge Carriers
  • Chemical Compounds
  • Compound Semiconductors
  • Conduction Bands
  • Dispersions
  • Electronic States
  • Electronics
  • Energy Bands
  • Fermi Levels
  • Impurities
  • Indium
  • Indium Antimonides
  • Inorganic Chemicals
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Atmospheric Science / Meteorology, specifically Wind Wave Turbulence.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene