Photoemission from Amorphous Silicon.
Abstract
Amorphous films were prepared by vapor quenching in ultra-high vacuum. n- and p-type silicon crystals were used as substrates and vapor source. The measurements (performed on clean and cesium covered surfaces) included photoelectric yield, energy distributions of photoelectrons, surface photovoltage, secondary emission with emphasis on elastic reflections, plasmon excitations, and Auger spectra. Information about densities of states, optical transitions, and position of Fermi level was obtained by direct comparison of photoelectric emission from the amorphous film, a silicon crystal, and a metal measured simultaneously. The results were found to depend on the mode of preparation and annealing of disordered films. (Author Modified Abstract)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1973
- Accession Number
- AD0758267
Entities
People
- Mehmet Erbudak
- Traugott E. Fisher
Organizations
- Yale University